numbers reflect the limitations of the test circuit rather than the
device itself.
IS
≤
ID
-
8A
di
/
dt
≤
700A/µs
VR
≤
1000
TJ
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10
-5
0.9
0.7
0.5
Note:
PDM
t1
t2
4-2004
0.3
050-7126 Rev A
0.1
0.05
10
-4
SINGLE PULSE
t
Duty Factor D = 1/t2
Peak TJ = PDM x Z
θJC
+ TC
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
I
D
, DRAIN CURRENT (AMPERES)
18
16
14
12
10
8
6
4
2
0
VGS =15,10 & 7.5V
APT1001R6BFLL_SFLL
7V
6.5V
RC MODEL
Junction
temp. ( ”C)
0.205
Power
(Watts)
0.264
Case temperature
0.0981F
0.00544F
6V
5.5V
5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
20
18
I
D
, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
1.40
1.30
1.20
NORMALIZED TO
= 10V 4A
V
GS
16
14
12
10
8
6
4
2
0
TJ = -55°C
TJ = +125°C
TJ = +25°C
VGS=10V
1.10
1.00
0.90
0.80
VGS=20V
0
1
2
3
4
5
6
7
8
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
0
2
4
6
8
10
12 14
16
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
I
D
, DRAIN CURRENT (AMPERES)
7
6
5
4
3
2
1
0
25
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
8
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
I
V
D
= 4A
= 10V
GS
2.0
1.1
1.0
0.9
0.8
0.7
0.6
-50
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7126 Rev A
4-2004
33
I
D
, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
5,000
APT1001R6BFLL_SFLL
Ciss
10
5
C, CAPACITANCE (pF)
100µS
1,000
Coss
100
Crss
1
.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
10
100
1000
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
1mS
10mS
.1
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 8A
200
100
12
VDS=200V
VDS=500V
8
VDS=800V
TJ =+150°C
TJ =+25°C
10
4
20
30
40
50
60 70 80
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
40
35
30
t
d(off)
0
0
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
40
35
30
t
f
t
d(on)
and t
d(off)
(ns)
R
G
= 5Ω
20
15
10
5
0
4
T = 125°C
J
t
r
and t
f
(ns)
25
V
DD
= 667V
25
20
15
10
5
t
r
V
DD
G
L = 100µH
= 667V
R
= 5Ω
T = 125°C
J
L = 100µH
t
d(on)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
G
6
8
10
12
14
10
12
14
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
500
E
on
SWITCHING ENERGY (µJ)
0
4
6
8
800
= 667V
R
= 5Ω
T = 125°C
J
SWITCHING ENERGY (µJ)
600
L = 100µH
E
ON
includes
diode reverse recovery.
E
on
400
V
DD
= 667V
300
I
D
J
= 8A
400
T = 125°C
200
L = 100µH
E
ON
includes
diode reverse recovery.
4-2004
200
E
off
0
4
6
8
10
12
14
100
E
off
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
050-7126 Rev A
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
Typical Performance Curves
90%
10%
Gate Voltage
T
J
125°C
APT1001R6BFLL_SFLL
Gate Voltage
t
d(on)
t
r
90%
5%
10%
Drain Current
5%
Drain Voltage
Switching Energy
t
d(off)
Drain Voltage
90%
T 125°C
J
t
f
10%
0
Switching Energy
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF100
V
DD
I
C
V
CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
3
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
1.04 (.041)
1.15 (.045)
Drain
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
0.46 (.018)
0.56 (.022) {3 Plcs}
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
20.32 (.800)
1.22 (.048)
1.32 (.052)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
